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    DPG60I400HA 0.0 0.4 0.8 1.2 1.6 2.0 20 40 60 80 100 120 0 200 400 600 60 70 [ns] 80 90 100 110 100 101 102 103 104 0.1 1.0 0 40 80 120 160 0.2 0.4 0.6 Kf 0.8 1.0 1.2 1.4 TVJ [°C] -diF/dt [A/μs] t[ms] 0 200 400 600 200 300 400 500 [ns] 600 700 800 900 1000 1100 1200 2 3 4 5 6 [V] 7 8 VFR 9 10 11 12 0 200 400 600 4 6 8 10 12 RM 14 16 18 20 22 0200400600 0.2 0.4 0.6 μC] 0.8 1.0 Qrr [ VF [V] -diF/dt [A/μs] ZthJC [K/W] IRM Qrr VFR tfr TVJ = 150°C Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qrr versus -diF/dt Fig. 3 Typ. reverse recov. current IRM versus -diF/dt Fig. 4 Typ. dynamic parameters Qrr,IRM versus TVJ Fig. 5 Typ. reverse recov. time trrversus -diF/dt Fig. 6 Typ. forward recovery voltage VFR &timetfr versus diF/dt Fig. 8 Transient thermal impedance junction to case 25°C IF [A] -diF/dt [A/μs] I [A] trr -diF /dt [A/μs] tfr 0 200 400 600 0 10 20 30 40 Erec [μJ] -diF/dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF/dt IF = 120 A 60 A 30 A TVJ =125°C VR = 270 V TVJ =125°C VR = 270 V TVJ = 125°C VR = 270 V TVJ =125°C VR = 270 V IF = 60 A TVJ = 125°C VR = 270 V 120 A 60 A 30 A 120 A 60 A 30 A 120 A 60 A 30 A Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20131101a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |